APEC 2020

We support APEC's difficult decision to suspend its in-person conference in light of COVID-19. Stay healthy and stay tuned as we work to deliver our planned presentations and demonstrations in a digital format.

Demonstrations from Wolfspeed

6.6 kW Bi-Directional On-Board Charger

Learn about the future of bi-directional OBCs powered by Wolfspeed’s 650 V SiC MOSFET. Wolfspeed’s award-nominated reference design illustrates unparalleled power density in this next generation technology.

Featuring: Wolfspeed 650V Schottky Diodes and 650V MOSFETs

6.6 kW High Frequency Full-Bridge LLC DC/DC Converter

Imagine your design potential with the 650 V Sic MOSFET’s faster switching speeds. This LIVE demo showcases the breakthrough power switching conversion unimagined by outdated silicon counterparts.

Featuring: Wolfspeed 650V Schottky Diodes and 650V MOSFETs

300 kW Three Phase Inverter

Optimized for Wolfspeed’s SiC MOSFETS, this 3 Phase Inverter is thermally and electrically optimized in state-of-the-art packaging. Unleash the power of your application in a module sized for efficient and space-limited environments.

Featuring: Wolfspeed XM3 Modules

Juried Presentations

Monday, March 16, 2020

SiC Power Technology: Answering Automotive Readiness

Location: Great Hall A

Speaker: John Palmour

Tuesday, March 17, 2020

IS03.6 - A Comparison of Fixed DC-Link and Variable DC-Link Schemes for Bi-Directional EV On-Board Charger

Location: R01

Speaker: Jianwen Shao

Thursday, March 19, 2020

Redesign with SiC – An EMI Compliance Rapid Prototyping

Location: R08

Speaker: Cam Pham

Thursday, March 19, 2020

IS22.4- Increasing Power Density with Direct-Cooled SiC Power Modules in 3-Phase Inverters

Location: R06

Speaker: Matthew Feurtado

Thursday, March 19, 2020

IS25.3 - High-Frequency High-Power-Density Power Converters with SiC MOSFETs

Location: R04-R05

Speaker: Yuequan Hu

Reference Designs

  • Enables over 2x the power density of comparable Si based designs and >98% efficiency.
  • Switching frequency is set by the user, up to 80 kHz.
  • Uses the CAB450M12XM3 Module and CGD12HBXMP Gate Driver
  • Request the full design files using the button above.
  • Demonstration of 1000 V, 65 mΩ C3M™ SiC MOSFET in a 6.6 kW Bi-Directional EV On-Board Charger
  • 6.6 kW Bi-Directional EV On-Board Charger demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC stage based on CLLC topology with a variable DC Link Voltage
  • Cree’s 6.6 kW Bi-Directional EV On-Board Charger demo board can accept 90VAC-265VAC as an input and provide 250VDC-450VDC at the output with > 96% of efficiency in both charging and inversion modes
  • Main target applications of this demo board include: EV Charging industry and the Energy Storage industry
  • Documentation includes a bill of materials (BOM), schematic, board layout and the application note
  • Evaluate and optimize steady state and high speed switching performance of Wolfspeed C3M™ SiC MOSFETs and Schottky diodes
  • Analyze the evaluation board in versatile power conversion topologies, such as Synchronous / Asynchronous Buck or Boost converter, Half Bridge and Full Bridge (Please note: Full Bridge topology requires 2 Evaluation Kits)
  • Board features footprints for both 3 and 4 lead TO-247 packages of C3M™ SiC MOSFETs
  • Compatible with both TO-247 and TO-220 packages of SiC Schottky diodes
  • Does not require an additional capacitor to run the evaluation board in the buck or boost converter topologies
  • Two (2) dedicated gate drivers available on the board for each C3M™ SiC MOSFET
  • Includes (2) 1200 V, 75mΩ C3M™ SiC MOSFETs in a TO-247-4 Package with the testing hardware

Knowledge Center

Use SiC-Based MOSFETs to Improve Power Conversion Efficiency

The trends of higher power requirements, regulatory mandates, and standards on efficiency and EMI issues are driving the need for power supplies to use switching power devices due to their greater efficiency and wider operating range

Replenishing the Grid with A SiC-Based Bi-Directional On-Board Charger

Range anxiety and charger availability have long been the main hurdles to the adoption of electric vehicles. But even as car makers have demonstrated their batteries can go longer distances and charging stations have proliferated, challenges with EV charging remain as well as opportunities to load balance power grids.

Increasing the Power Density and Efficiency of Double Conversion UPS with Silicon Carbide Power Modules

In this presentation, Wolfspeed will demonstrate the system level improvements for Uninterruptable Power Supplies (UPS) and other grid tied systems that can be achieved with the latest innovations in Silicon Carbide Power Modules.

Learn More

Why Choose Wolfspeed?

Silicon Carbide

Wolfspeed’s founders were the first to successfully synthesize silicon carbide, and for the last 30 years have focused on designing and supplying the world’s power and RF systems designers with the industry’s highest performing silicon carbide and GaN-on-silicon carbide technologies for high-power applications.


As a pioneer in silicon carbide semiconductors, we now field the world’s broadest, most capable portfolio of next-generation, silicon carbide and GaN-on-silicon carbide components to support power and RF industry needs.


We are the only vertically-integrated semiconductor manufacturer serving both the silicon carbide and GaN-on-silicon carbide markets and control 100% of our SiC material supply. We have committed more than $1 billion to grow SiC wafer and device production capacity 30-fold by 2024.