Learn about the future of bi-directional OBCs powered by Wolfspeed’s 650 V SiC MOSFET. Wolfspeed’s award-nominated reference design illustrates unparalleled power density in this next generation technology.
Featuring: Wolfspeed 650V Schottky Diodes and 650V MOSFETs
Imagine your design potential with the 650 V Sic MOSFET’s faster switching speeds. This LIVE demo showcases the breakthrough power switching conversion unimagined by outdated silicon counterparts.
Featuring: Wolfspeed 650V Schottky Diodes and 650V MOSFETs
Optimized for Wolfspeed’s SiC MOSFETS, this 3 Phase Inverter is thermally and electrically optimized in state-of-the-art packaging. Unleash the power of your application in a module sized for efficient and space-limited environments.
Featuring: Wolfspeed XM3 Modules
Monday, March 16, 2020
4:30-5:00pm
SiC Power Technology: Answering Automotive Readiness
Location: Great Hall A
Speaker: John Palmour
Tuesday, March 17, 2020
11:05-11:30am
IS03.6 - A Comparison of Fixed DC-Link and Variable DC-Link Schemes for Bi-Directional EV On-Board Charger
Location: R01
Speaker: Jianwen Shao
Thursday, March 19, 2020
8:30-8:55am
Redesign with SiC – An EMI Compliance Rapid Prototyping
Location: R08
Speaker: Cam Pham
Thursday, March 19, 2020
9:45-10:10am
IS22.4- Increasing Power Density with Direct-Cooled SiC Power Modules in 3-Phase Inverters
Location: R06
Speaker: Matthew Feurtado
Thursday, March 19, 2020
2:35-3:00pm
IS25.3 - High-Frequency High-Power-Density Power Converters with SiC MOSFETs
Location: R04-R05
Speaker: Yuequan Hu
The trends of higher power requirements, regulatory mandates, and standards on efficiency and EMI issues are driving the need for power supplies to use switching power devices due to their greater efficiency and wider operating range
Range anxiety and charger availability have long been the main hurdles to the adoption of electric vehicles. But even as car makers have demonstrated their batteries can go longer distances and charging stations have proliferated, challenges with EV charging remain as well as opportunities to load balance power grids.
In this presentation, Wolfspeed will demonstrate the system level improvements for Uninterruptable Power Supplies (UPS) and other grid tied systems that can be achieved with the latest innovations in Silicon Carbide Power Modules.
Wolfspeed’s founders were the first to successfully synthesize silicon carbide, and for the last 30 years have focused on designing and supplying the world’s power and RF systems designers with the industry’s highest performing silicon carbide and GaN-on-silicon carbide technologies for high-power applications.
As a pioneer in silicon carbide semiconductors, we now field the world’s broadest, most capable portfolio of next-generation, silicon carbide and GaN-on-silicon carbide components to support power and RF industry needs.
We are the only vertically-integrated semiconductor manufacturer serving both the silicon carbide and GaN-on-silicon carbide markets and control 100% of our SiC material supply. We have committed more than $1 billion to grow SiC wafer and device production capacity 30-fold by 2024.