×
Why Choose Wolfspeed? Demonstrations Presentations New Product Releases Follow Us

Transforming Power with

Industry Leading Silicon Carbide Expertise and Capacity

PCIM 2019 in Germany

Dates: May 7 — May 9, 2019
Location: Messe Nürnberg | Stand: 9-240

Join Wolfspeed at the world's leading conference and expo for showcasing the latest in power technology and trends.

Why Choose Wolfspeed?

An icon showing a first-place ribbon

SiC Expertise

  • Wolfspeed has more than 30 years of experience in Silicon Carbide (SiC).
  • We have more than 70% market share of SiC wafer sales.
  • We designed the industry’s first MOSFET.
  • We have clocked more than 100 billion combined field hours for SiC Power Installations.
  • We have the industry's best FIT rate.
A second icon showing a checklist with multiple completed items

Assortment

  • Our extensive portfolio includes everything from bare die to discretes and modules
  • We're on our third generation of MOSFETs, whereas most companies are only on their first. More generations means more refined designs with better performance.
  • We're expanding our assortment with our launch of the industry's most powerful bare die, Gen 3 MOSFETs using those bare die, a new high power density half-bridge module and our Gen 6 Schottky diodes.
  • As packaging experts, our MOSFETs and diodes have industry-leading efficiency and switching rates.
A third icon showing a factory building

Capacity

  • Wolfspeed is the only power semiconductor manufacturer that is vertically integrated, so we control supply and design from wafer to module.
  • We are the only semiconductor manufacturer that controls 100% of our SiC material supply.
  • We doubled our production capacity in September 2018.
  • Wolfspeed is on track to double production capacity again before the end of calendar year 2020.

Reference Design Demos

We have models for four news reference designs, including a high frequency DC/DC converter and a new 6.6 kW Bi-Directional On-Board Charger with 30% greater power density than our previous design. We're also featuring DBT's 150 kW Fast Charger which utilizes both Wolfspeed reference designs and components.

Visit us in Stand 9-240 to see our new demos and talk with our system experts

2.2 kW Totem Pole PFC

This 2.2 kW Totem Pole demonstrates the capability of Wolfspeed C3MTM SiC MOSFETs in new low-inductance packaging to cut losses and simplify designs. Targeting 80 Plus Platinum and 80 Plus Titanium standard server power, the PFC delivers a 1% increase in system efficiency when compared to existing silicon interleaved PFC boost circuits, while also increasing power density by 15% and lowering overall system BOM cost.

6.6 kW High Density On-Board Charger

The 6.6 kW Bi-Directional On-Board Charger (OBC) targets high-power-density, high-efficiency on-board charger applications. The system delivers 54W/in3 power density and exceeding 96.5% in peak efficiency with 67kHz switching frequency for CCM totem pole PFC and 150kHz-300kHz for a CLLC resonant converter.

6.6 kW 1MHz DC/DC Converter

The 6.6 kW Full-Bridge LLC DC/DC converter targets high-frequency, high-efficiency and high-power-density applications such as on-board chargers and bus converters. Benefits of high-frequency operation include smaller magnetics and EMI filters, and higher power density.

300 kW Three Phase Inverter featuring the new XM3 Power Module!

This 300 kW Three-Phase Inverter is designed to demonstrate how Wolfspeed’s C3M SiC MOSFETs in new low-inductance power module packaging can cut losses and simplify designs. The inverter has >2X the power density of comparable Si based designs and >98% efficiency. The design features XAB450M12XM3, 1200 V, 450 A half-bridge power module in Wolfspeed’s next generation package and optimized gate drivers with built-in protections.

150 kW DBT Fast Charger

Wolfspeed SiC MOSFETs and Schottky diodes are used in this fast charger featuring two Wolfspeed system designs that deliver up to 95% efficiency: PFC Stage – Vienna Rectifier and DC/DC Stage – Full Bridge LLC.

Presentations

Any presentations listed in bright purple are on the exhibition floor and can be viewed without a pass or registration. All presentations in dark purple require conference registration.

Tuesday, May 7th

11:00–11:20

Optimizing SiC Bare Die and Modules for High Power Applications

Presentation Type: Exhibitor Forum

Location: Hall 7, Forum Stand

Speakers: Edgar Ayerbe, Wolfspeed, A Cree Company, USA

15:15–17:15

A Bi-Directional AC/DC Converter for Electric Vehicle Charging Application Using Bi-Directional,
Fixed Frequency CLLC Converter Based on SiC Device

Presentation Type: Poster Session

Track: Automotive and Electromobility

Speakers: Jianwen Shao, Guy Moxey, Wolfspeed, A Cree Company, USA; Binod Agrawal, Wolfspeed, A Cree Company, IND

Wednesday, May 8th

10:00–11:00

A 6.6kW High Power Density Bi-directional On-Board Charger Based on SiC MOSFETs

Presentation Type: Oral Sessions

Location: Brüssel 1

Track: Automotive Power Converters

Speakers: Frank Wei, Cree, CN

11:15–12:15

Electro-Thermal Co-Design of a 250 kW Silicon Carbide Traction Inverter for Heavy Equipment Applications

Presentation Type: Oral Sessions

Location: Brüssel 1

Track: Automotive Power Converters

Speakers: Yue Zhao, Alan Mantooth, Zhongjing Wang, University of Arkansas, USA; Muhammad Jahidul Hoque, Nenad Miljkovic, Nithin Vinod Upot, University of Illinois, USA; Brett Sparkman, John Fraley, Wolfspeed, A Cree Company, USA

13:30–14:30

3.3kW High-Frequency Full-Bridge LLC DC/DC Converter with SiC MOSFETS

Presentation Type: Oral Sessions

Location: Brüssel 1

Track: Automotive DC-DC Converters

Speakers: Yuequan Hu, Jianwen Shao, Wolfspeed/Cree, USA

13:30–15:30

SiC – Devices are Mature

Presentation Type: Forum Panel

Location: Hall 7, Stand 543

Track: Bodo’s Podium Panel Discussion on Wide Band Gap Devices

Speakers: Guy Moxey

15:15–17:15

High-Performance 300 kW 3-Phase SiC Inverter Based on Next Generation Modular SiC Power Modules

Presentation Type: Poster Sessions

Location: Foyer Ground Floor Entrance, NCC Mitte

Track: High Power Converters

Speakers: Jianwen Shao, Guy Moxey, Wolfspeed, A Cree Company, USA; Binod Agrawal, Wolfspeed, A Cree Company, IND

Thursday, May 9th

15:15–17:15

Reliability of SiC MOSFET with Danfoss Bond Buffer in Automotive Traction Power Modules

Presentation Type: Oral Sessions

Location: München 2

Track: Chip Bond Technologies

Speaker: Alexander Streibel, Martin Becker, Ole Mühlfeld, Danfoss Silicon Power; D; Jeffrey Casady, Brett Hull, Shadi Sabri,
Wolfspeed, A Cree Company USA; Daniel J. Lichtenwalner, Cree, USA

Products

A close-up picture of a Bare Die. It looks like a copper mesh on a gray background.

13mOhm Bare Die

Part of Wolfspeed's new family of the most powerful bare die on the market, this bare die achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range.

Click to Learn More

A second close-up picture of a bare die. It looks like a copper mesh on a gray background.

16mOhm Bare Die

Part of Wolfspeed's new family of the most powerful bare die on the market, this bare die achieves a remarkable 16mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range.

Coming soon

A close-up picture of a MOSFET. It looks like a small black square with three silver tines coming from one end.

C3M MOSFETs Featuring the New 1200V Bare Die

This addition to Wolfspeed 3rd generation of 1200V MOSFETs features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.

Click to learn more

A close-up picture of a power module. It looks like a small black and silver rectangle. It has three smaller rectangles afixed to it.

XM3 Half Bridge Power Module

Wolfspeed's new high density XM3 is the lightest, smallest by volume, smallest footprint half-bridge power module with full operating temperature range up to 175C.

Coming soon

A close-up picture of a diode. It looks like a small black square with two curved tines on either side of one end, with a much smaller tine in the middle.

Generation 6 Diodes

Based on Wolfspeed's 150mm SiC wafer technology, our new C6D offers the lowest forward voltage drop, reducing conduction losses and delivering high efficiency and system power density.

Coming soon

Follow Us