Join Wolfspeed at ICSCRM 2019

Dates:	September 29 — October 4, 2019
Location:	Kyoto International Conference Center in Kyoto, Japan

Visit the Wolfspeed booth to hear about our $1 billion investment to increase our Silicon Carbide product capacity 30X by 2024.

Industry Party

Wolfspeed invites you to Karaoke in Kyoto

Join us for a night of great local food, music, drinks, live performances and karaoke to celebrate another year of innovation and growth for SiC.

Everyone is invited to attend — no RSVP is necessary!

When:	Tuesday, Oct 1st, from 8:00 PM — 1:00 AM
Where:	Fortune Gardens, 386-2 Ichinofunairicho, Nakagyo Ward, Kyoto 604-0924, Japan

Directions

Train Guide from ICSCRM Venue

Get on the Karasuma line (blue) at the Kokusaikaikan station
(Stop K01, labeled 1 on our guide)
Get off at Karasume Oike station (K08, labeled 2 on our guide)
and switch to the Tozai line (red)
Get off at Kyoto City Hall station (T12, labled 3 on our guide).
Use exit number 16 to leave the station. Walk 1 minute north

Download Our Subway Guide

Train Guide from Kyoto Station

Get on the Karasuma line (blue) at Kyoto Station
(Stop K11, labeled 1 on our guide)
Get off Karasuma Oike station (K08, labeled 2 on our guide)
and switch to the Tozai line (red)
Get off at Kyoto City Hall station (T12, labled 3 on our guide).
Use exit number 16 to leave the station. Walk 1 minute north

Download Our Subway Guide

Presentations

Monday, September 30th

Wolfspeed Industry Update at the Welcome Reception

Time: 6:00 PM

Location: Swan Room

Presenter: Warren Weeks, GM of Wolfspeed Materials

Wednesday, October 2nd

High Volume Manufacturing and Qualification of 6.5 kV, 30 A SiC Power MOSFETs on 150mm Wafers

Time: 9:30-9:45 AM

Location: Room A

Contributing Author: Daniel J. Lichtenwalner, Ph.D.

Type: Oral Presentation

High Volume Manufacturing and Qualification of 6.5 kV, 30 A SiC Power MOSFETs on 150mm Wafers

Time: 4:15-6:15 PM

Location: Annex Hall 1

Presenter: Edward Van Brunt, Ph.D.

Type: Poster Session

Thursday, October 3rd

Accelerated Testing of SiC Power Devices for Predicting Device Lifetime un High-Field Operating Conditions

Time: 8:45-9:15 AM

Location: Room A

Presenter: Donald Gajewski, Ph.D.

Type: Invited Presentation

From Wafers to Bits and Back Again: Using Deep Learning to Accelerate the Development and Characterization of SiC Material

Time: 9:15-9:30 AM

Location: Annex Hall 2

Presenter: Robert T. Leonard, Ph.D.

Type: Oral Presentation

Friday, October 4th

A Comparison of Bipolar and Unipolar SiC Devices for Medium Voltage Switching Applications

Time: 11:15-11:30 AM

Location: Room A

Presenter: Edward Van Brunt, Ph.D.

Type: Oral Presentation

30 Years of SiC Innovation

Fueling 30X SiC Capacity for the future