Leading the World’s Conversion

to GaN on SiC

Join Wolfspeed at European Microwave Week 2019

Dates: October 1 — October 3, 2019
Location: Paris, France | Stand: B175

Meet us in stand B175 to:

  • See our featured products for Aerospace/Defense RF and Communications Infrastructure applications

  • View our broad assortment of GaN on SiC and LDMOS parts

  • Learn about our Foundry Services and the free, online training that is coming soon

  • Talk with our technical experts about your system design challenges

Why Choose Wolfspeed?

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SiC Expertise

  • Wolfspeed has more than 30 years of experience in Silicon Carbide (SiC)
  • We created the industry’s first GaN on SiC HEMT with record power density in 1998
  • We demonstrated the industry’s first GaN HEMT MMIC grown on semi-insulating SiC substrate
  • We have more than 70% market share of SiC wafer sales
  • We are a Department of Defense Trusted 1A Foundry
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  • Our radar products span L-Band to Ku-Band
  • Our extensive portfolio includes a wide vairtey of LDMOS and GaN on SiC solutions for Telecom, Aerospace and Defense communications
  • We offer LDMOS and GaN on SiC solutions for 4G and 5G, including our 3.6-3.8 GHz High Efficiency Doherty GaN Transistor
  • We also provide General Purpose Broadband and Satcom solutions, including two new products for our unmatched discrete GaN HEMT product line at 35W and 120W
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  • Wolfspeed is the only power semiconductor manufacturer that is vertically integrated, so we control supply and design from wafer to module
  • We are the only semiconductor manufacturer that controls 100% of our SiC material supply
  • We doubled our production capacity in September 2018
  • Wolfspeed is on track to double production capacity again before the end of calendar year 2020

Live Presentations

We’re offering three presentations during the open exhibition days. Come by to get more details and to speak with members of our Application Development team

Tuesday, October 1st

Foundry Panel Session: mmWave MMIC Foundry Processes

Location: : EuMW Closing Session, Pavillon 7, Room N01

Wolfspeed's Foundry Services turn your designs into a faster, more reliable reality. As leaders in GaN on SiC MMIC technology, we have the design assistance, testing and support to realize your specifications from initial development to recurring production. With the release of our 0.15μm process, we now can support all your applications from DC through Ka Band. This process is the only GaN process in mm-Wave that supports high reliability at 28V.

Applications include Satellite Communications, EW, Radio Links, 5G, C-IED and ISM.

Ku Band and X Band Demonstrations

Location: Mercure Vaugirard Porte de Versailles Hotel

CMPA1D1E080F is a Mid Ku-Band GaN MMIC PA for SatCom Applications and radio links. With 500 MHz video bandwidth, the CMPA1D1E080F provides an industry leading and reliable solution for tube replacements for satellite communication. The three-stage design provides ample gain while maintaining linearity across the band.

Applications include: Satellite Communications and Radio Links.

CMPA901A035F is a Broadband GaN MMIC Power Amplifier for 28 V X-Band radar applications. With a three stage design, the CMPA901A035F provides a high gain and output power solution at X-Band using Wolfspeed’s industry leading GaN technology. The high PAE at these frequencies combined with a ceramic package allows the flexibility for this device to operate CW for applications outside radar.

Applications include: X-Band Military Radar, Marine Radar, and Weather Radar

Wednesday, October 2nd

Designing GaN Power Amplifiers with Wolfspeed Large Signal Models

Location: Mercure Vaugirard Porte de Versailles Hotel

This presentation will cover the core aspects of the Wolfspeed nonlinear GaN HEMT model in relation to designing power amplifiers. The Wolfspeed GaN model has successfully assisted designers to achieve numerous successful power amplifier designs using Wolfspeed’s GaN HEMT foundry services. Designers often achieved design specs with first pass iteration and greatly reduced design cost and design cycles using the model. A design example using the model will be given in the presentation including product number CG2H30070 and using process G28v4.

Applications include the EW market for dismounted or man-portable uses.


GTRA384802FC — 3.6 – 3.8 GHz High Efficiency GaN Doherty Transistor

Communications Infrastructure

High efficiency and high peak power ideal for 40W base station systems

Learn More

GTRA374902FC — 3.6 – 3.7 GHz High Efficiency GaN Doherty Transistor

Communications Infrastructure

High efficiency and high peak power ideal for 40W base station systems

Learn More

CGHV35120F — 50V, 120W, 3.1 – 3.5 GHz, GaN HEMT

Aerospace & Defense

Next level performance in the 100-W power class for S-Band radar RF devices

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CMPA2060035F — 28V, 35W, 2 – 6 GHz, GaN MMIC PA

Aerospace & Defense

A new GaN HEMT MMIC amplifier delivering 35 watts of power from 2 to 6 GHz of bandwidth

Learn More

High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 — 1215 MHz


The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

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CMPA901A035 — 28V, 35W, 8.0 – 10.5GHz, GaN MMIC PA

Aerospace & Defense

Broadband GaN MMIC power amplifier for 28V X-band radar applications

Learn More

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